- 您现在的位置：买卖IC网 > Sheet目录131 > DSAI75-18B (IXYS)DIODE CATH 1800V 110A DO-203AB
      ? 2000 IXYS All rights reserved 2 - 2 DS 75 DSI 75 DSA 75 DSAI 75 11023456789ms 104 105 10-3 10-2 10-1 100 0 500 1000 1500 0.0 0.5 1.0 1.5 V 0 50 100 I 150F 200 0 50 100 150 200A 0 50 100 150 2000 °C 0 50 100 150 200 10-3 10-2 10-1 100 101 102 103 0.0 0.5 1.0 1.5 I2t IFSM A VF t s t PF W IF(AV)M Tamb t s ZthJH K/W A2s 0 40 80 120 160 200°C 0 50 100 150 200 IF(AV)M Tcase A A Fig. 6 Transient thermal impedance junction to heatsink RthJH for various conduction angles d: dRthJH (K/W) DC 0.900 180 1.028 120 1.085 60 1.272 30 1.476 Constants for ZthJH calculation: iRthi (K/W) t i (s) 1 0.0731 0.0015 2 0.1234 0.0237 3 0.4035 0.4838 4 0.3000 1.5 Fig. 1 Forward characteristics Fig. 2 Surge overload current IFSM: crest value, t: duration Fig. 3 I2t versus time (1-10 ms) Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case temperature 6 4 2 typ. lim. TVJ= 180°C TVJ= 25°C TVJ = 180°C TVJ = 45°C 50Hz, 80%VRRM TVJ = 45°C TVJ = 180°C VR = 0 V DC 180° sin 120° 60° 30° DC 180° sin 120° 60° 30° RthJA : 1 K/W 1.2 K/W 1.6 K/W 2 K/W 3 K/W 4 K/W 30° 60° 120° 180° DC |